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| IDP09E120 IDB09E120 Fast Switching EmCon Diode Feature * 1200 V EmCon technology * Fast recovery * Soft switching * Low reverse recovery charge * Low forward voltage * Easy paralleling Product Summary VRRM IF VF T jmax P-TO220-3.SMD 1200 9 1.65 150 P-TO220-2-2. V A V C Type IDP09E120 IDB09E120 Package P-TO220-2-2. Ordering Code Q67040-S4479 Marking D09E120 D09E120 Pin 1 C NC PIN 2 A C PIN 3 A P-TO220-3.SMD Q67040-S4384 Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Repetitive peak reverse voltage Continous forward current TC=25C TC=90C Symbol VRRM IF Value 1200 23 14.4 Unit V A Surge non repetitive forward current TC=25C, tp=10 ms, sine halfwave I FSM I FRM Ptot 50 36 W 69 33 Maximum repetitive forward current TC=25C, tp limited by Tjmax, D=0.5 Power dissipation TC=25C TC=90C Operating and storage temperature Soldering temperature 1.6mm(0.063 in.) from case for 10s Tj , Tstg TS -55...+150 260 C C Rev.2 Page 1 2003-07-31 IDP09E120 IDB09E120 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. RthJC RthJA RthJA - Values typ. 35 max. 1.8 62 62 - Unit K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Reverse leakage current V R=1200V, T j=25C V R=1200V, T j=150C Symbol min. IR VF - Values typ. max. Unit A 1.65 1.7 100 700 V 2.15 - Forward voltage drop IF=9A, Tj=25C IF=9A, Tj=150C 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Rev.2 Page 2 2003-07-31 IDP09E120 IDB09E120 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Reverse recovery time V R=800V, IF=9A, di F/dt=750A/s, Tj=25C V R=800V, IF=9A, di F/dt=750A/s, Tj=125C V R=800V, IF=9A, di F/dt=750A/s, Tj=150C Symbol min. t rr I rrm Q rr S - Values typ. max. Unit ns 140 200 210 13.3 16.1 16.5 950 1470 1600 5.4 6.5 6.6 A nC - Peak reverse current V R=800V, IF = 9 A, diF/dt=750A/s, Tj=25C V R=800V, IF =9A, diF /dt=750A/s, T j=125C V R=800V, IF =9A, diF /dt=750A/s, T j=150C Reverse recovery charge V R=800V, IF=9A, di F/dt=750A/s, Tj=25C V R=800V, IF =9A, diF /dt=750A/s, T j=125C V R=800V, IF =9A, diF /dt=750A/s, T j=150C Reverse recovery softness factor V R=800V, IF=9A, di F/dt=750A/s, Tj=25C V R=800V, IF=9A, di F/dt=750A/s, Tj=125C V R=800V, IF=9A, di F/dt=750A/s, Tj=150C Rev.2 Page 3 2003-07-31 IDP09E120 IDB09E120 1 Power dissipation Ptot = f (TC) parameter: Tj 150 C 70 2 Diode forward current IF = f(TC) parameter: Tj 150C 25 W A 50 P tot IF 40 30 20 10 0 25 50 75 100 150 15 10 5 C TC 0 25 50 75 100 C TC 150 3 Typ. diode forward current IF = f (VF) 27 4 Typ. diode forward voltage VF = f (Tj) 2.6 A 21 18 -55C 25C 100C 150C V 18A 2.2 VF 15 12 9 1.6 6 3 0 0 1.4 4,5A IF 2 9A 1.8 0.5 1 1.5 2 V VF 3 1.2 -60 -20 20 60 100 C Tj 160 Rev.2 Page 4 2003-07-31 IDP09E120 IDB09E120 5 Typ. reverse recovery time trr = f (diF/dt) parameter: V R = 800V, T j = 125C 690 6 Typ. reverse recovery charge Qrr =f(diF/dt) parameter: VR = 800V, Tj = 125 C 2000 ns 590 540 nC 18A 1800 Q rr 490 440 390 340 290 240 190 140 90 200 300 400 500 18A 9A 4,5A 1700 1600 1500 1400 1300 1200 1100 1000 9A trr 4,5A 600 700 800 A/s 1000 di F/dt 900 200 300 400 500 600 700 800 A/s 1000 di F/dt 7 Typ. reverse recovery current Irr = f (diF/dt) parameter: V R = 800V, T j = 125C 21 8 Typ. reverse recovery softness factor S = f(diF /dt) parameter: VR = 800V, Tj = 125C 18 A 18A 9A 4,5A 17 14 Irr 13 S 18A 9A 4,5A 300 400 500 600 700 800 15 12 10 11 8 9 6 7 4 5 200 A/s 1000 di F/dt 2 200 300 400 500 600 700 800 A/s 1000 di F/dt Rev.2 Page 5 2003-07-31 IDP09E120 IDB09E120 9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = t p/T 10 1 IDP09E120 K/W 10 0 ZthJC 10 -1 D = 0.50 10 -2 0.20 0.10 0.05 10 -3 single pulse 0.02 0.01 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Rev.2 Page 6 2003-07-31 IDP09E120 IDB09E120 TO-220-2-2 A P symbol [mm] min A 9.70 15.30 0.65 3.55 2.60 9.00 13.00 17.20 4.40 0.40 B C D E max 10.10 15.90 0.85 3.85 3.00 9.40 14.00 17.80 4.80 0.60 min 0.3819 0.6024 0.0256 0.1398 0.1024 0.3543 0.5118 0.6772 0.1732 0.0157 N dimensions [inch] max 0.3976 0.6260 0.0335 0.1516 0.1181 0.3701 0.5512 0.7008 0.1890 0.0236 D U H B V E F W J G F G H J K L M N P T U V W 1.05 typ. 2.54 typ. 4.4 typ. 1.10 1.40 2.4 typ. 6.6 typ. 13.0 typ. 7.5 typ. 0.00 0.40 0.41 typ. 0.1 typ. 0.173 typ. 0.0433 0.0551 0.095 typ. 0.26 typ. 0.51 typ. 0.295 typ. 0.0000 0.0157 X L C M T K X Rev.2 Page 7 2003-07-31 IDP09E120 IDB09E120 TO-220-3-45 (P-TO220SMD) dimensions symbol min A B C D E F G H K L M N P Q R S T U V W X Y Z [mm] max min 9.80 10.00 1.3 typ. 1.25 1.75 0.95 1.15 2.54 typ. 0.72 0.85 5.08 typ. 4.30 1.28 9.00 4.50 1.40 9.40 [inch] max 0.3858 0.3937 0.0512 typ. 0.0492 0.0689 0.0374 0.0453 0.1 typ. 0.0283 0.0335 0.2 typ. 0.1693 0.0504 0.3543 0.1772 0.0551 0.3701 2.30 2.50 14.1 typ. 0.00 0.20 3.30 3.90 8 max 1.70 2.50 0.50 0.65 10.8 typ. 1.35 typ. 6.43 typ. 4.60 typ. 9.40 typ. 16.15 typ. 0.0906 0.0984 0.5551 typ. 0.0000 0.0079 0.1299 0.1535 8 max 0.0669 0.0984 0.0197 0.0256 0.4252 typ. 0.0532 typ. 0.2532 typ. 0.1811 typ. 0.3701 typ. 0.6358 typ. Rev.2 Page 8 2003-07-31 IDP09E120 IDB09E120 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2 Page 9 2003-07-31 |
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